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| Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 Silicon Controlled Rectifier Features * Repetitive Peak Off-State Voltage : 600V * R.M.S On-State Current(IT(RMS)=10A) * Low On-State Voltage (1.4V(Typ.)@ ITM) * Non-isolated Type General Description Standard gate triggering SCR is suitable for the application where requiring high bi-directional blocking voltage capability and also suitable for over voltage protection,motor control cicuit in power tool,inrush current limit circuit and heating control system. Absolute Maximum Ratings=25ae Ta unless otherwise specified (c) T s t g S torage Temperature ------------------------------------------------------ - 40~125ae Tj O perating Junction Temperature ---------------------------------------------- - 40~125ae Peak Off-State Voltage -------------------------------------------------------------------- 600V VDRM Repetitive IT RMS(c) .M.S On-State Current R 180 Conduction Angles(c) ---------------------------------------- 10A IT(AV) Average On-State Current (Half Sine Wave : TC = 111 ----------------------------------------6.4A C) ITSM 2 Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive) -------------------------- 110A 60A2 s 5W I t Circuit Fusing Considerations(t = 8.3ms) -----------------------------------------------------------PGM Forward Peak Gate Power Dissipation (Ta=25ae --------------------------------------------------) PG(AV) Forward Average Gate Power Dissipation (Ta=25ae ,t=8.3ms) VRGM ---------------------------------0.5W IFGM Forward Peak Gate Current -------------------------------------------------------------------------------- 2A Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 (c) Conditions VAK =VDRM Electrical Characteristics=25ae Ta unless otherwise specified Symbol IDRM Items Repetitive Peak Off-State Current Peak On-State Voltage (1) Gate Trigger Current 2(c) Gate Trigger Voltage (2) Non-Trigger Gate Voltage Holding Current Thermal Resistance Thermal Resistance Critical Rate of Rise Off-state Voltage 200 0.2 20 1.3 60 Min. Typ. Max. 10 200 1.6 15 1.5 Unit uA V mA V Ta=25ae Ta=125ae ITM=20A,tp=380 s VAK =6V(DC), RL =10 ohm VAK =6V(DC), RL =10 ohm VTM IGT VG T VGD IH Rth(j-c) Rth(j-a) dv/dt Ta=25ae V VAK =12V, RL =100 ohm Ta=125ae IT=100mA,Gate open, mA Ta=25ae ae /W ae /W V/ s Junction to Case Junction to Ambient Linear slope up to VD=VDRM67% Gate open Tj=125ae 1. Forward current applied for 1 ms maximum duration,duty cycle U 1%. 2. RGK current is not included in measurement Performance Curves FIGURE 1 - Gate Characteristics Max. Allowable Case Temperture ( c) FIGURE 2 -Maximum CaseTemperture Gate Voltage (v) Gate Current (mA) Average On-State Current (mA) Shantou Huashan Electronic Devices Co.,Ltd. HCF10C60 FIGURE 4-Thermal Response FIGURE 3-Typical Forward Voltage(V) Transient Thermal Imperdance ( c) On-State Voltage (V) On-State Current(A) Time (sec) FIGURE 5-Typical Gate Trigger Voltage VS Junction Temperature FIGURE 6-Typical Gate Trigger Current VS Junction Temperature Junction Temperature ( C) Junction Temperature ( C) FIGURE 7-Typical Holding Current FIGURE 8-Power Dissipation Max. Average Power Junction Temperature ( C) Dissipation (W) Average On-State Current (A) |
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